ANALYSIS OF RECOMBINATION OF EXCITONS BOUND TO DEEP NEUTRAL DONORS AND ACCEPTORS

被引:10
作者
JAYSON, JS
机构
来源
PHYSICAL REVIEW B | 1972年 / 6卷 / 06期
关键词
D O I
10.1103/PhysRevB.6.2372
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2372 / &
相关论文
共 17 条
[1]   MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].
BACHRACH, RZ ;
LORIMOR, OG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :500-&
[2]   VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].
CASEY, HC ;
ERMANIS, F ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+
[3]   AUGER ELECTRON CONDUCTIVITY IN SILICON .2. [J].
CUTHBERT, JD .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :747-&
[4]   ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].
DEAN, PJ .
PHYSICAL REVIEW, 1967, 157 (03) :655-&
[5]   OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].
DEAN, PJ ;
FAULKNER, RA ;
KIMURA, S ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1971, 4 (06) :1926-&
[6]   ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL ACCEPTORS IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
FAULKNER, RA ;
KIMURA, S .
SOLID STATE COMMUNICATIONS, 1970, 8 (12) :929-&
[7]   EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].
HAYNES, JR .
PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363
[8]   NEW RED PAIR LUMINESCENCE FROM GAP [J].
HENRY, CH ;
DEAN, PJ ;
CUTHBERT, JD .
PHYSICAL REVIEW, 1968, 166 (03) :754-&
[9]  
HOPFIELD JJ, 1964, 1964 P INT C PHYS SE, P725
[10]   PHOTOLUMINESCENT SATURATION IN GAP (ZN, O) [J].
JAYSON, JS .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3854-&