COMPOSITE AVALANCHE DIODE STRUCTURES FOR INCREASED POWER CAPABILITY

[1] BERMAN R, 1965, PHYSICAL PROPERTIES

[2] CARSLAW, 1959, CONDUCTION HEAT SOLI, P217

[3] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[4] DELOACH BC, ADVANCES MICROWAVES

[5] FREQUENCY LOCKING AND MODULATION OF MICROWAVE SILICON AVALANCHE DIODE OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1475 - &

[6] FUKUI H, 1966, INT ELECTRON DEVICE

[7] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[8] MISAWA T, 1966, INT ELECTRON DEVICE

[9] CONTINUOUS OSCILLATIONS AT MILLIMETER WAVELENGTHS WITH SILICON AVALANCHE DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (10): : 1747 - &

[10] IMPORTANCE OF PROVIDING A GOOD HEAT SINK FOR AVALANCHING TRANSIT TIME OSCILLATOR DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03): : 451 - &

[1] BERMAN R, 1965, PHYSICAL PROPERTIES

[2] CARSLAW, 1959, CONDUCTION HEAT SOLI, P217

[3] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[4] DELOACH BC, ADVANCES MICROWAVES

[5] FREQUENCY LOCKING AND MODULATION OF MICROWAVE SILICON AVALANCHE DIODE OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1475 - &

[6] FUKUI H, 1966, INT ELECTRON DEVICE

[7] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[8] MISAWA T, 1966, INT ELECTRON DEVICE

[9] CONTINUOUS OSCILLATIONS AT MILLIMETER WAVELENGTHS WITH SILICON AVALANCHE DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (10): : 1747 - &

[10] IMPORTANCE OF PROVIDING A GOOD HEAT SINK FOR AVALANCHING TRANSIT TIME OSCILLATOR DIODES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03): : 451 - &