DEPOSITION OF PLANARIZED DIELECTRIC LAYERS BY BIASED SPUTTER DEPOSITION

被引:6
作者
SINGH, B
MESKER, O
DEVLIN, D
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 02期
关键词
D O I
10.1116/1.583950
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:567 / 574
页数:8
相关论文
共 20 条
[1]   PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) :423-429
[2]   MEASURING THE PHOSPHORUS CONCENTRATION IN DEPOSITED PHOSPHOSILICATE FILMS [J].
ADAMS, AC ;
MURARKA, SP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) :334-338
[3]   SCANNING ELECTRON-MICROSCOPE INVESTIGATION OF GLASS FLOW IN MOS INTEGRATED-CIRCUIT FABRICATION [J].
ARMSTRONG, WE ;
TOLLIVER, DL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (02) :307-310
[4]   PLANARIZATION BY RADIO-FREQUENCY BIAS SPUTTERING OF ALUMINUM AS STUDIED EXPERIMENTALLY AND BY COMPUTER-SIMULATION [J].
BADER, HP ;
LARDON, MA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2167-2171
[5]   STEP COVERAGE SIMULATION AND MEASUREMENT IN A DC PLANAR MAGNETRON SPUTTERING SYSTEM [J].
BLECH, IA ;
VANDERPLAS, HA .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3489-3496
[6]  
CAMPBELL DS, 1970, HDB THIN FILM TECHNO, pCH12
[7]  
CHANG P, 1984, SEMICONDUCTOR IN NOV, P79
[8]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[9]  
HARROP PJ, 1970, HDB THIN FILM TECHNO, pCH16
[10]   LSI SURFACE LEVELING BY RF SPUTTER ETCHING [J].
HOMMA, Y ;
HARADA, S ;
KAJI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1531-1533