HYDROGEN EFFECTS ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON-CRYSTALS

被引：16

作者：

HARA, A

AOKI, M

FUKUDA, T

OHSAWA, A

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.354858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270-degrees-C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution annealing at 1270-degrees-C and aggregates of hydrogen were formed during quenching. This article examines hydrogen aggregates by Secco etching and transmission electron microscope. Hydrogen-related aggregates are found to be related to enhanced oxygen precipitation.

引用

页码：913 / 916

页数：4

共 19 条

[1]

AOKI M, COMMUNICATION

[2] ENHANCED THERMAL DONOR FORMATION IN SILICON EXPOSED TO A HYDROGEN PLASMA [J].