OXYGEN-NITROGEN COMPLEXES IN SILICON FORMED BY ANNEALING IN NITROGEN

被引：60

作者：

HARA, A

FUKUDA, T

MIYABO, T

HIRAI, I

机构：

来源：

关键词：

D O I：

10.1063/1.100899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：626 / 628

页数：3

共 8 条

[1]

Abe T., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P537

BROWER, KL .

PHYSICAL REVIEW B, 1982, 26 (11) :6040-6052

[3]

Crank J, 1956, MATH DIFFUSION

[4]

HARA A, UNPUB

ITOH, T ;

ABE, T .

[6]

KOHN W, 1957, SOLID STATE PHYS, V5, P527

[7]

Stein H. J., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P523

[8] NITROGEN-OXYGEN COMPLEXES AS SHALLOW DONORS IN SILICON-CRYSTALS [J].

SUEZAWA, M ;

SUMINO, K ;

HARADA, H ;

ABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10) :L859-L861