ON THE DESIGN OF POLARIZATION-INSENSITIVE OPTOELECTRONIC DEVICES

被引：20

作者：

CHELLES, S

FERREIRA, R

VOISIN, P

机构：

[1] Lab. de Phys. de la Matiere Condensee, Ecole Normale Superieure, Paris

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 01期

关键词：

D O I：

10.1088/0268-1242/10/1/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We examine theoretically the problem of the polarization dependence of guided-wave devices. We show that tensile-strained quantum wells near the light-and heavy-hole degeneracy provide almost equal absorption spectra and nearly identical electroabsorption curves in the TE and TM modes, which are necessary features for on-line applications such as signal amplification and pulse reshaping in optical fibre telecommunication systems.

引用

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页码：105 / 109

页数：5

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