EFFICIENT POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATOR USING STRAINED INGAASP-BASED QUANTUM-WELLS

被引：12

作者：

CHELLES, S ^{[1
]}

FERREIRA, R ^{[1
]}

VOISIN, P ^{[1
]}

OUGAZZADEN, A ^{[1
]}

ALLOVON, M ^{[1
]}

CARENCO, A ^{[1
]}

机构：

[1] FRANCE TELECOM, CNET, PAB BAG, F-92225 BAGNEUX, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期

关键词：

D O I：

10.1063/1.111263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarization insensitivity is presently an important challenge for electro-optical components for optical-fiber telecommunications. We report on a polarization insensitive electroabsorption modulator based on strained InGaAsP/InGaAsP multiple quantum wells and having remarkably high static performances, as illustrated by a record figure of merit of 4.3 (dB/100 mum)/(V/mum). We also discuss in detail the theoretical aspects of electroabsorption polarization independence for quantum well modulators.

引用

页码：3530 / 3532

页数：3

共 13 条

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