10 GBIT/S OPERATION OF POLARIZATION-INSENSITIVE, STRAINED INGAASP INGAASP MQW ELECTROABSORPTION MODULATOR

被引：11

作者：

DEVAUX, F ^{[1
]}

CHELLES, S ^{[1
]}

OUGAZZADEN, A ^{[1
]}

MIRCEA, A ^{[1
]}

HUET, F ^{[1
]}

CARRE, M ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER, LPMC, F-75231 PARIS 05, FRANCE

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 13期

关键词：

OPTICAL MODULATORS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19930803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polarisation-independent operation of a strained InGaAsP/InGaAsP multiquantum well electroabsorption modulator is reported for the first time. A clearly open eye diagram is observed at 10 Gbit/s with scrambled polarisation state of input light. The chirp parameter is also reported for both TE and TM.

引用

收藏

页码：1201 / 1203

页数：3

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