10 GBIT/S OPERATION OF POLARIZATION-INSENSITIVE, STRAINED INGAASP INGAASP MQW ELECTROABSORPTION MODULATOR

被引:11
作者
DEVAUX, F [1 ]
CHELLES, S [1 ]
OUGAZZADEN, A [1 ]
MIRCEA, A [1 ]
HUET, F [1 ]
CARRE, M [1 ]
机构
[1] ECOLE NORMALE SUPER, LPMC, F-75231 PARIS 05, FRANCE
关键词
OPTICAL MODULATORS; SEMICONDUCTOR QUANTUM WELLS;
D O I
10.1049/el:19930803
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Polarisation-independent operation of a strained InGaAsP/InGaAsP multiquantum well electroabsorption modulator is reported for the first time. A clearly open eye diagram is observed at 10 Gbit/s with scrambled polarisation state of input light. The chirp parameter is also reported for both TE and TM.
引用
收藏
页码:1201 / 1203
页数:3
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