HYPERFINE INTERACTIONS OF THE PB CENTER AT THE SIO2 SI(111) INTERFACE

[1] Abragam A., 1970, ELECT PARAMAGNETIC R, P702

[2] GENERATION OF INTERFACE STATES IN MOS SYSTEMS [J]. THIN SOLID FILMS, 1982, 89 (04) : 329 - 338

[3] STRAIGHT SI-O-SI BRIDGING BONDS DO EXIST IN SILICATES AND SILICON DIOXIDE POLYMORPHS [J]. ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, 1980, 36 (OCT): : 2198 - 2202

[4] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 33 (05): : 3006 - 3011

[5] INFRARED SPECTRUM OF TRIDEUTEROSILANE AND THE STRUCTURE OF THE SILANE MOLECULE [J]. JOURNAL OF CHEMICAL PHYSICS, 1955, 23 (05) : 922 - 926

[6] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[7] ELECTRON-SPIN-RESONANCE STUDIES OF THERMALLY OXIDIZED SILICON-WAFERS [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 399 - 404

[8] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[9] PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES IN SILICON-ON-INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1450 - 1452

[10] CARLOS WE, COMMUNICATION

[1] Abragam A., 1970, ELECT PARAMAGNETIC R, P702

[2] GENERATION OF INTERFACE STATES IN MOS SYSTEMS [J]. THIN SOLID FILMS, 1982, 89 (04) : 329 - 338

[3] STRAIGHT SI-O-SI BRIDGING BONDS DO EXIST IN SILICATES AND SILICON DIOXIDE POLYMORPHS [J]. ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, 1980, 36 (OCT): : 2198 - 2202

[4] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1986, 33 (05): : 3006 - 3011

[5] INFRARED SPECTRUM OF TRIDEUTEROSILANE AND THE STRUCTURE OF THE SILANE MOLECULE [J]. JOURNAL OF CHEMICAL PHYSICS, 1955, 23 (05) : 922 - 926

[6] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[7] ELECTRON-SPIN-RESONANCE STUDIES OF THERMALLY OXIDIZED SILICON-WAFERS [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 399 - 404

[8] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[9] PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES IN SILICON-ON-INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1450 - 1452

[10] CARLOS WE, COMMUNICATION