NUCLEATION OF ORIENTED DIAMOND PARTICLES ON COBALT SUBSTRATES

被引:39
作者
LIU, W
TUCKER, DA
YANG, PC
GLASS, JT
机构
[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh
关键词
D O I
10.1063/1.360768
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nucleation of oriented diamond particles on cobalt substrates has been achieved by a multistep, hot-filament chemical vapor deposition process, which involves seeding, annealing, nucleation, and then growth. The substrates were seeded with either diamond powders, graphite powders, or gaseous carbon species. Scanning electron microscopy showed that 〈111〉 oriented diamond particles were obtained on 〈0001〉 oriented single crystal cobalt substrates. Micro-Raman indicated that the quality of the diamond grown on the cobalt substrate was high, with a full width at half maximum of 4.3 cm -1. A very weak graphitic peak was observed on regions of the substrate not covered by the diamond particles, indicating that graphite codeposition was significantly suppressed. Scanning Auger depth profile analysis was done to characterize the diamond nucleation. Based on the experimental observations, a nucleation model is proposed. © 1995 American Institute of Physics.
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页码:1291 / 1296
页数:6
相关论文
共 24 条
[1]  
ANGUS JC, 1968, Patent No. 3361526
[2]   LOSS OF EPITAXY DURING DIAMOND FILM GROWTH ON ORDERED NI(100) [J].
BELTON, DN ;
SCHMIEG, SJ .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4223-4229
[3]   PREPARATION OF DIAMOND [J].
BOVENKERK, HP ;
BUNDY, FP ;
HALL, HT ;
STRONG, HM ;
WENTORF, RH .
NATURE, 1959, 184 (4693) :1094-1098
[4]  
DERIAGUIN BV, 1969, NEW SCI, V30, P228
[5]  
FIELD JE, 1979, PROPERTIES DIAMOND, P284
[6]   HETEROEPITAXIAL DIAMOND GROWTH ON (100) SILICON [J].
JIANG, X ;
KLAGES, CP .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :1112-1113
[7]   SYNTHESIS OF DIAMONDS BY USE OF MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION - MORPHOLOGY AND GROWTH OF DIAMOND FILMS [J].
KOBASHI, K ;
NISHIMURA, K ;
KAWATE, Y ;
HORIUCHI, T .
PHYSICAL REVIEW B, 1988, 38 (06) :4067-4084
[8]   BIAS-CONTROLLED CHEMICAL VAPOR-DEPOSITION OF DIAMOND THIN-FILMS [J].
LEE, YH ;
RICHARD, PD ;
BACHMANN, KJ ;
GLASS, JT .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :620-622
[9]  
LIDE DR, 1990, HDB CHEM PHYSICS, P12
[10]   CHEMICAL VAPOR-DEPOSITION OF A DIAMOND COATING ONTO A TUNGSTEN CARBIDE TOOL USING ETHANOL [J].
MURAKAWA, M ;
TAKEUCHI, S ;
MIYAZAWA, H ;
HIROSE, Y .
SURFACE & COATINGS TECHNOLOGY, 1988, 36 (1-2) :303-310