HETEROEPITAXIAL DIAMOND GROWTH ON (100) SILICON

被引：219

作者：

JIANG, X

KLAGES, CP

机构：

[1] Fraunhofer-Institut für Schicht- und Oberflächentechnik (FhG-IST), W-2000 Hamburg 54

来源：

关键词：

D O I：

10.1016/0925-9635(93)90282-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly oriented diamond films have been deposited on mirror-polished single-crystal (100) silicon by microwave plasma chemical vapour deposition. The crystallites are grown with their (001) planes parallel to silicon (001) and their [110] directions parallel to silicon [110], as shown by scanning electron microscopy and X-ray diffraction analysis.

引用

页码：1112 / 1113

页数：2

共 11 条

[1] DEVRIES RC, 1972, CUBIC BORON NITRIDE
[2] Field J.E., 1979, PROPERTIES DIAMOND
[3] DEVICE APPLICATIONS OF DIAMONDS
GEIS, MW
EFREMOW, NN
RATHMAN, DD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1953 - 1954
[4] FORMATION OF UNIFORM SOLID-PHASE EPITAXIAL COSI2 FILMS BY PATTERNING METHOD
ISHIBASHI, K
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (08): : 912 - 917
[5] ORIENTED CUBIC NUCLEATIONS AND LOCAL EPITAXY DURING DIAMOND GROWTH ON SILICON (100) SUBSTRATES
JENG, DG
TUAN, HS
SALAT, RF
FRICANO, GJ
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (20) : 1968 - 1970
[6] JIANG X, IN PRESS
[7] EPITAXIAL-GROWTH OF DIAMOND THIN-FILMS ON CUBIC BORON NITRIDE(111) SURFACES BY DC PLASMA CHEMICAL VAPOR-DEPOSITION
KOIZUMI, S
MURAKAMI, T
INUZUKA, T
SUZUKI, K
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (06) : 563 - 565
[8] ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATES
NARAYAN, J
SRIVATSA, AR
PETERS, M
YOKOTA, S
RAVI, KV
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1823 - 1825
[9] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
NISHINO, S
POWELL, JA
WILL, HA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462
[10] SATO Y, 1991, 2ND P INT C NEW DIAM, P371

← 1 2 →