EXCITON LINEWIDTH IN SEMICONDUCTING QUANTUM-WELL STRUCTURES

被引：50

作者：

SPECTOR, HN ^{[1
]}

LEE, J ^{[1
]}

MELMAN, P ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2554

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2554 / 2561

页数：8

共 41 条

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[6] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 265 - 275
[7] ELECTRO-ABSORPTION BY STARK-EFFECT ON ROOM-TEMPERATURE EXCITONS IN GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 864 - 866
[8] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
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[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[9] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[10] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234

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