ROOM-TEMPERATURE PHOTOPUMPED ZNSE LASERS

被引：32

作者：

ZMUDZINSKI, CA

GUAN, Y

ZORY, PS

机构：

[1] Department of Electrical Engineering, University of Florida, Gainesville

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 02期

关键词：

D O I：

10.1109/68.47058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature laser oscillation at 469 nm in photo-pumped bulk ZnSe has been observed for the first time. This result was obtained by using a pump photon energy very close to the bandgap energy and by enhancing the resonator Q with high reflectivity coatings. Threshold pump power densities as low as 370 kW/cm2 were measured. © 1990 IEEE

引用

页码：94 / 96

页数：3

共 15 条

[1] ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY
AKIMOTO, K
MIYAJIMA, T
MORI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L531 - L534
[2] MATERIALS GROWTH AND ITS IMPACT ON DEVICES FROM WIDE BAND-GAP II-VI COMPOUNDS
BHARGAVA, RN
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 873 - 879
[3] STIMULATED-EMISSION AND LASER OSCILLATIONS IN ZNSE-ZN1-XMNXSE MULTIPLE QUANTUM WELLS AT APPROXIMATELY 453-NM
BYLSMA, RB
BECKER, WM
BONSETT, TC
KOLODZIEJSKI, LA
GUNSHOR, RL
YAMANISHI, M
DATTA, S
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1039 - 1041
[4] ELECTRON-BEAM PUMPED LASING IN ZNSE/ZNSSE SUPERLATTICE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
CAMMACK, DA
DALBY, RJ
CORNELISSEN, HJ
KHURGIN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 3071 - 3074
[5] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY
CHENG, H
DEPUYDT, JM
POTTS, JE
SMITH, TL
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 147 - 149
[6] OPTICALLY PUMPED ROOM-TEMPERATURE GAAS LASERS
CHINN, SR
ROSSI, JA
WOLFE, CM
MOORADIAN, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 294 - 300
[7] ELECTRON-BEAM PUMPED II-VI-LASERS
COLAK, S
FITZPATRICK, BJ
BHARGAVA, RN
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 504 - 511
[8] SURFACE PASSIVATION OF GAAS
LEE, HH
RACICOT, RJ
LEE, SH
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (08) : 724 - 726
[9] HOMOEPITAXIAL AND HETEROEPITAXIAL GROWTH OF HIGH-QUALITY ZNSE BY MOLECULAR-BEAM EPITAXY
PARK, RM
MAR, HA
SALANSKY, NM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1637 - 1640
[10] ELECTRON-BEAM PUMPED LASING IN ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
POTTS, JE
SMITH, TL
CHENG, H
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 7 - 9

← 1 2 →