MATERIALS GROWTH AND ITS IMPACT ON DEVICES FROM WIDE BAND-GAP II-VI COMPOUNDS

[1] PHOTOENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZNSE FILMS USING DIETHYLZINC AND DIMETHYLSELENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 802 - 805

[2] Basov N. G., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n11ABEH011989

[3] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 15 - 26

[4] BHARGAVA RN, 1987, B AM PHYS SOC, V32, P610

[5] BHARGAVA RN, 1985, P INT DISPLAY RES C, P200

[6] GROWTH AND PROPERTIES OF IN-DOPED CDMNTE-CDTE SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 691 - 693

[7] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1095 - 1097

[8] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1735 - 1737

[9] CAMMACK DA, IN PRESS J APPL PHYS

[10] CAMMACK DA, 1986, COMMUNICATION

[1] PHOTOENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZNSE FILMS USING DIETHYLZINC AND DIMETHYLSELENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 802 - 805

[2] Basov N. G., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n11ABEH011989

[3] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 15 - 26

[4] BHARGAVA RN, 1987, B AM PHYS SOC, V32, P610

[5] BHARGAVA RN, 1985, P INT DISPLAY RES C, P200

[6] GROWTH AND PROPERTIES OF IN-DOPED CDMNTE-CDTE SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 691 - 693

[7] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1095 - 1097

[8] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1735 - 1737

[9] CAMMACK DA, IN PRESS J APPL PHYS

[10] CAMMACK DA, 1986, COMMUNICATION