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IMPROVEMENT OF SIO2 SI INTERFACE PROPERTIES UTILIZING FLUORINE ION-IMPLANTATION AND DRIVE-IN DIFFUSION

被引：24
作者：
OHYU, K
ITOGA, T
NISHIOKA, Y
NATSUAKI, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 06期
关键词：
D O I：
10.1143/JJAP.28.1041
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1041 / 1045
页数：5
相关论文
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OHYU K, 1988, 20TH INT C SOL STAT, P607
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