ELECTRICAL, SEM, AND TEM STUDIES IN ZNTE .1. IMPURITY SEGREGATION DURING SHORT ANNEALINGS AND QUENCHING

被引：19

作者：

BENSAHEL, D ^{[1
]}

DUPUY, M ^{[1
]}

PFISTER, JC ^{[1
]}

机构：

[1] CEN,DIV CRISTALLOGENESE & RECH MAT,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 55卷 / 01期

关键词：

D O I：

10.1002/pssa.2210550124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lithium behaviour, responsible for one of the two dominant acceptor levels in the II—VI compound ZnTe is investigated. Lithium, a residual impurity, is contained in Te inclusions in as‐grown crystals. After short thermal anneals and quenching, lithium is released from the inclusions and acts as LiZn ≡ “b” acceptor at 61 meV. Its distribution changes across the sample thickness. The main effects are: a variation of the doping level observed by electrical and optical measurements, a large variation in the contrasts observed in SEM in the cathodoluminescence mode, and effects associated with quenching and annealing atmosphere observed in TEM. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：211 / 221

页数：11

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