HYDROGEN-ION BOMBARDMENT OF GAAS

被引：36

作者：

STEEPLES, K

DEARNALEY, G

STONEHAM, AM

机构：

[1] UNIV LANCASTER,DEPT PHYS,LANCASTER LA1 4YQ,LANCASHIRE,ENGLAND

[2] AERE,DIV NUCL PHYS,HARWELL OX11 0RA,OXFORDSHIRE,ENGLAND

[3] AERE,DIV THEORET PHYS,HARWELL OX11 0RA,OXFORDSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 12期

关键词：

D O I：

10.1063/1.91390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：981 / 983

页数：3

相关论文

共 14 条

[1] RECOMBINATION-ENHANCED DEFECT REACTIONS STRONG NEW EVIDENCE FOR AN OLD CONCEPT IN SEMICONDUCTORS
DEAN, PJ
CHOYKE, WJ
[J]. ADVANCES IN PHYSICS, 1977, 26 (01) : 1 - 30
[2] LUMINESCENT TRANSITIONS ASSOCIATED WITH DIVALENT COPPER IMPURITIES AND GREEN EMISSION FROM SEMICONDUCTING ZINC OXIDE
DINGLE, R
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 579 - &
[3] DINGLE RB, 1977, J NUCL MATER, V69, P109
[4] MULTIPLE-ENERGY PROTON-BOMBARDMENT IN N+-GAAS
DONNELLY, JP
LEONBERGER, FJ
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 183 - 189
[5] DEEP PROTON-ISOLATED LASERS AND PROTON RANGE DATA FOR INP AND GASB
HENSHALL, GD
THOMPSON, GHB
WHITEAWAY, JEA
SELWAY, PR
BROOMFIELD, M
[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (01): : 1 - 5
[6] RECOMBINATION ENHANCED DEFECT REACTIONS
KIMERLING, LC
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1391 - 1401
[7] KIMERLING LC, 1979, I PHYS C SER, V46, P56
[8] RECOMBINATION - SURVEY
MOTT, NF
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1275 - 1280
[9] NEWMAN RC, 1979, COMMUNICATION
[10] STEEPLES K, UNPUBLISHED