ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES

被引：131

作者：

HUIJSER, A

VANLAAR, J

VANROOY, TL

机构：

来源：

关键词：

D O I：

10.1016/0375-9601(78)90722-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：337 / 339

页数：3

共 6 条

[1] ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS
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[2] CHADI DJ, UNPUBLISHED
[3] ANGLE-RESOLVED PHOTOEMISSION STUDIES OF SURFACE-STATES ON (110) GAAS
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LAPEYRE, GJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 757 - 760
[4] PHOTOEMISSION AND BAND-STRUCTURE STUDIES OF GAAS(110) SURFACE
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FREEOUF, JL
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 904 - 909
[5] PHOTOEMISSION FROM A AG(111) SURFACE - FAILURE OF PLANE-WAVE, ORTHOGONALIZED-PLANE-WAVE, AND AUGMENTED-PLANE-WAVE FINAL-STATES
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LIEBOWITZ, D
[J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2395 - 2399
[6] ELECTRONIC SURFACE PROPERTIES OF GA AND IN CONTAINING 3-5 COMPOUNDS
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HUIJSER, A
VANROOY, TL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 894 - 898