PHOTOEMISSION AND BAND-STRUCTURE STUDIES OF GAAS(110) SURFACE

被引：70

作者：

PANDEY, KC ^{[1
]}

FREEOUF, JL ^{[1
]}

EASTMAN, DE ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.569326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：904 / 909

页数：6

相关论文

共 31 条

[1] ELECTRONIC-STRUCTURE OF SOLID-SURFACES
APPELBAUM, JA
HAMANN, DR
[J]. REVIEWS OF MODERN PHYSICS, 1976, 48 (03) : 479 - 496
[2] SELF-CONSISTENT QUANTUM-THEORY OF CHEMISORPTION - H ON SI(111)
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (13) : 806 - 809
[3] RELAXATION EFFECTS ON (110) SURFACE OF GAAS
CHELIKOWSKY, JR
LOUIE, SG
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (10) : 4724 - 4726
[4] DAVISSON SG, 1970, SOLID STATE PHYSICS, V25
[5] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1624 - 1627
[6] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
EASTMAN, DE
GROBMAN, WD
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
[7] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON
FLITSCH, R
RAIDER, SI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 305 - 308
[8] SURFACE STATE BAND ON GAAS (110) FACE
GREGORY, PE
SPICER, WE
CIRACI, S
HARRISON, WA
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 511 - 514
[9] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS
GUDAT, W
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837
[10] Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421

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