FERROELECTRIC/PHOTOCONDUCTOR MEMORY DEVICE

[1] SOME THIN-FILM PROPERTIES OF A NEW FERROELECTRIC COMPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2381 - &

[2] CHAPMAN DW, 1970, 1970 IEEE COMP C P

[3] CERAMIC FERROELECTRIC FIELD EFFECT STUDIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (06) : 525 - &

[4] A FERROELECTRIC FIELD EFFECT DEVICE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06): : 842 - +

[5] PRELIMINARY INVESTIGATION OF A BISMUTH TITANATE MEMORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (06) : 576 - &

[6] MOLL JL, 1963, SOLID STATE DEVICE R

[7] MOLL JL, 1963, 4 STANF EL LAB REP

[8] AN ADAPTIVE THIN-FILM TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (12) : 816 - &

[9] SCHAFFERT RM, 1961, Patent No. 3148354

[10] NON-DESTRUCTIVE READOUT OF FERROELECTRICS BY FIELD EFFECT CONDUCTIVITY MODULATION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (05) : 527 - +

[1] SOME THIN-FILM PROPERTIES OF A NEW FERROELECTRIC COMPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2381 - &

[2] CHAPMAN DW, 1970, 1970 IEEE COMP C P

[3] CERAMIC FERROELECTRIC FIELD EFFECT STUDIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (06) : 525 - &

[4] A FERROELECTRIC FIELD EFFECT DEVICE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06): : 842 - +

[5] PRELIMINARY INVESTIGATION OF A BISMUTH TITANATE MEMORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (06) : 576 - &

[6] MOLL JL, 1963, SOLID STATE DEVICE R

[7] MOLL JL, 1963, 4 STANF EL LAB REP

[8] AN ADAPTIVE THIN-FILM TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (12) : 816 - &

[9] SCHAFFERT RM, 1961, Patent No. 3148354

[10] NON-DESTRUCTIVE READOUT OF FERROELECTRICS BY FIELD EFFECT CONDUCTIVITY MODULATION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (05) : 527 - +