INVESTIGATIONS ON N-CDO/P-CDTE THIN HIM HETEROJUNCTIONS

被引：13

作者：

SRAVANI, C ^{[1
]}

REDDY, KTR ^{[1
]}

HUSSAIN, OM ^{[1
]}

REDDY, PJ ^{[1
]}

机构：

[1] SRI VENKATESWARA UNIV,DEPT PHYS,TIRUPATI 517502,ANDHRA PRADESH,INDIA

来源：

THIN SOLID FILMS | 1994年 / 253卷 / 1-2期

关键词：

CADMIUM TELLURIDE; ELECTRICAL PROPERTIES AND MEASUREMENTS; HETEROSTRUCTURES; SOLAR CELLS;

D O I：

10.1016/0040-6090(94)90344-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

n-CdO films were deposited by activated reactive evaporation on Coming 7059 glass substrates maintained at 473 K. p-CdTe films were electron beam evaporated onto n-CdO films at 548 K. A typical Coming 7059 glass/n-CdO/p-CdTe/Cu-Au heterojunction was fabricated and its current-voltage, capacitance-voltage characteristics and spectral response were studied. An electrical conversion efficiency of about 7.7%, with an open-circuit voltage of 695 mV and short-circuit current density of 17.3 mA cm(-2), was observed for the cell of an active area of 1 cm(2) under a solar input of 85 mW cm(-2).

引用

页码：339 / 343

页数：5

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