ELECTRICAL CHARACTERISTICS OF DIODES FABRICATED IN SELECTIVE-EPITAXIAL SILICON WELLS

被引：6

作者：

HARAME, D

GINSBERG, B

ARIENZO, M

MADER, S

DAGOSTINO, M

机构：

[1] IBM, Yorktown Heights, NY, USA, IBM, Yorktown Heights, NY, USA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 09期

关键词：

D O I：

10.1016/0038-1101(87)90126-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：907 / 912

页数：6

共 20 条

[1] CONTROL OF LATERAL EPITAXIAL CHEMICAL VAPOR-DEPOSITION OF SILICON OVER INSULATORS [J].

BRADBURY, DR ;

KAMINS, TI ;

TSAO, CW .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :519-523

[2]

COWLEY AM, 1969, SOLID ST ELECTRON, V12, P403

[3]

EPRATH L, 1979, J ELECTROCHEM SOC, V126, P1419

[4]

GINSBERG BJ, 1985, IBM RC11298 RES DIV

[5]

HINE S, IEEE JAP SOC APPL PH, V8, P116

[6] LOCAL LOADING EFFECT IN SELECTIVE SILICON EPITAXY [J].

ISHITANI, A ;

ENDO, N ;

TSUYA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L391-L393

[7] FACET FORMATION IN SELECTIVE SILICON EPITAXIAL-GROWTH [J].

ISHITANI, A ;

KITAJIMA, H ;

ENDO, N ;

KASAI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (10) :1267-1269

[8]

ISHITANTI A, 1984, JAP J APPL PHYS, V24, P1267

[9] DEVICE CHARACTERIZATION ON MONOCRYSTALLINE SILICON GROWN OVER SIO2 BY THE ELO (EPITAXIAL LATERAL OVERGROWTH) PROCESS [J].

JASTRZEBSKI, L ;

IPRI, AC ;

CORBOY, JF .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) :32-35

[10]

JASTRZEBSKI L, 1982, ELECTRONIC MATERIAL

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