FACET FORMATION IN SELECTIVE SILICON EPITAXIAL-GROWTH

被引：25

作者：

ISHITANI, A ^{[1
]}

KITAJIMA, H ^{[1
]}

ENDO, N ^{[1
]}

KASAI, N ^{[1
]}

机构：

[1] NEC CORP,MICROELECTR RES LABS,1-1 MIYAZAKI 4-CHOME,MIYAMAE KU,KAWASAKI 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 10期

关键词：

D O I：

10.1143/JJAP.24.1267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1267 / 1269

页数：3

共 13 条

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[9] CRYSTALLINE DEFECTS IN SELECTIVELY EPITAXIAL SILICON LAYERS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (12): : L783 - L785
[10] SELECTIVE LOW-PRESSURE SILICON EPITAXY FOR MOS AND BIPOLAR-TRANSISTOR APPLICATION
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