CRYSTALLINE DEFECTS IN SELECTIVELY EPITAXIAL SILICON LAYERS

被引：24

作者：

KITAJIMA, H

ISHITANI, A

ENDO, N

TANNO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1983年 / 22卷 / 12期

关键词：

D O I：

10.1143/JJAP.22.L783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L783 / L785

页数：3

共 10 条

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[3]

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[7] LATERAL EPITAXIAL OVERGROWTH OF SILICON ON SIO2 [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2303-2306

[8]

SCHNABLE GL, 1966, ELECTROCHEM TECHNOL, V4, P485

[9] SELECTIVE SILICON EPITAXY USING REDUCED PRESSURE TECHNIQUE [J].

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[10]

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