GROWTH OF ELECTRONIC QUALITY SILICON OVER SIO2 BY EPITAXIAL LATERAL OVERGROWTH TECHNIQUE

被引：27

作者：

JASTRZEBSKI, L

CORBOY, JF

PAGLIARO, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 11期

关键词：

D O I：

10.1149/1.2123639

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2645 / 2647

页数：3

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共 11 条

[1] EPICON CAMERA TUBE - EPITAXIAL DIODE ARRAY VIDICON
BLUMENFELD, SM
ELLIS, GW
REDINGTON, RW
WILSON, RH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (11) : 1036 - +
[2] IPRI AC, UNPUB
[3] MCGINN JT, 1982, J ELECTROCHEM SOC, V129, pC100
[4] MELLEND A, 1980, APPL PHYS LETT, V37, P560
[5] RATHMAN DD, 1981, 5TH INT C VAP GROWTH
[6] SMELTZER RK, 1975, J ELECTROCHEM SOC, V122, P1966
[7] SMITH HI, 1982, J ELECTROCHEM SOC, V129, pC100
[8] DEFORMATION IN DIELECTRIC-ISOLATED SUBSTRATES AND ITS CONTROL BY A MULTILAYER POLYSILICON SUPPORT STRUCTURE
SUZUKI, T
MIMURA, A
KAMEI, T
OGAWA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1537 - 1542
[9] IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION
TSAUR, BY
FAN, JCC
GEIS, MW
SILVERSMITH, DJ
MOUNTAIN, RW
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 561 - 563
[10] TSAUR BY, 1981, 1981 INT EL DEV M WA, P232