CHEMICAL VAPOR-DEPOSITION APPLICATIONS IN MICROELECTRONICS PROCESSING

[1] ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284

[2] LOW-TEMPERATURE DIFFERENTIAL OXIDATION FOR DOUBLE POLYSILICON VLSI DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1779 - 1785

[3] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[4] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &

[5] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[6] DIELECTRIC ISOLATION - COMPREHENSIVE, CURRENT AND FUTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) : C5 - C12

[7] BEAN KE, 1963, 1963 EL SOC FALL M

[8] BEAN KE, 1968, Patent No. 3379584

[9] BERNARD R, 1981, IEEE SPECTRUM, V5

[10] CRISHAL JM, 1962, EL SOC EXT ABSTR, V114, P202

[1] ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284

[2] LOW-TEMPERATURE DIFFERENTIAL OXIDATION FOR DOUBLE POLYSILICON VLSI DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1779 - 1785

[3] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[4] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &

[5] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[6] DIELECTRIC ISOLATION - COMPREHENSIVE, CURRENT AND FUTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) : C5 - C12

[7] BEAN KE, 1963, 1963 EL SOC FALL M

[8] BEAN KE, 1968, Patent No. 3379584

[9] BERNARD R, 1981, IEEE SPECTRUM, V5

[10] CRISHAL JM, 1962, EL SOC EXT ABSTR, V114, P202