SELECTIVE ETCHING AND EPITAXIAL REFILLING OF SILICON WELLS IN SYSTEM SIH4-HC-H2

被引：15

作者：

DRUMINSKI, M ^{[1
]}

GESSNER, R ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,BALAN STR 73,D-8000 MUNICH,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-0248(75)90146-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：312 / 316

页数：5

共 7 条

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DRUMINSKI, M
SCHLOTTERER, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 249 - +
[3] SELECTIVE EPITAXIAL DEPOSITION OF SILICON
JOYCE, BD
BALDREY, JA
[J]. NATURE, 1962, 195 (4840) : 485 - &
[4] RAETZEL C, 1974, ECS M NEW YORK
[5] SCHNABLE GL, 1966, ELECTROCHEM TECHNOL, V4, P485
[6] Sirtl E., 1969, Semiconductor silicon, P189
[7] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1
THEUERER, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 649 - 653