APPROXIMATE ANALYTICAL SOLUTION OF GENERALIZED DIODE EQUATION

被引：50

作者：

FJELDLY, TA ^{[1
]}

MOON, BJ ^{[1
]}

SHUR, M ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 08期

关键词：

Photodetectors - Semiconductor Devices; Gunn Effect - Solar Cells - Transistors; Field Effect;

D O I：

10.1109/16.119046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We derive an approximate but very precise analytical solution of a generalized diode equation. This solution can be used in the theory of semiconductor diodes, photodetectors, solar cells, field-effect transistors, Gunn domain, and other areas of device physics. The proposed analytical solution is in excellent agreement with the results of the numerical calculation.

引用

页码：1976 / 1977

页数：2