UNIFIED CHARGE CONTROL MODEL AND SUBTHRESHOLD CURRENT IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

被引：65

作者：

BYUN, YH ^{[1
]}

LEE, K ^{[1
]}

SHUR, M ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,SEOUL 131,SOUTH KOREA

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new unified analytical charge control model covering the entire range of gate voltages from below and above threshold is developed for heterojunction field-effect transistors (HFET's). This model is based on the new interpretation of the quantized energy levels for the two-dimensional (2-D) electron gas. It reduces to a classical charge sheet model in the limit of low surface field. The model is used to interpret the experimental data for the subthreshold regime of HFET's. The results indicate wide range variation of the effective acceptor concentration after device fabrication processing in the unintentionally doped GaAs buffer layer. © 1990 IEEE

引用

页码：50 / 53

页数：4

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