ANALYTICAL MODELS FOR ALGAAS/GAAS HETEROJUNCTION QUANTUM-WELLS

被引：23

作者：

KHONDKER, AN

ANWAR, AFM

机构：

[1] Clarkson Univ, Potsdam, NY, USA, Clarkson Univ, Potsdam, NY, USA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 08期

关键词：

SEMICONDUCTOR DEVICES - Heterojunctions;

D O I：

10.1016/0038-1101(87)90011-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two kinds of approximate analytical model for Al//xGa//1// minus //xAs-GaAs heterojunction quantum wells, have been developed to describe the energy levels of electrons in them. The proposed models are based on the existing triangular well approximation; however, they take into account the finite heterojunction barrier height and acceptor doping level in GaAs. From a device modelling point of view, the present models provide attractive alternatives to describe the change control in MODFETs.

引用

页码：847 / 852

页数：6

共 15 条

[1] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
DELAGEBEAUDEUF, D
LINH, NT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960
[2] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR
DRUMMOND, TJ
MORKOC, H
LEE, K
SHUR, M
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341
[3] THE EFFECT OF SUBBAND QUANTIZATION IN THE 2-D ELECTRON-GAS ON THERMIONIC CURRENT AND HETEROJUNCTION CAPACITANCE IN AN N-ALXGA1-XAS/N-GAAS HETEROJUNCTION
GREENWALD, Z
WOODARD, DW
TASKER, PJ
EASTMAN, LF
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (10) : 1099 - 1106
[4] HSING CT, 1979, PHYS STATUS SOLIDI A, V56, P129, DOI 10.1002/pssa.2210560113
[5] CHARGE CONTROL MECHANISM IN MODFETS - A THEORETICAL-ANALYSIS
KHONDKER, AN
ANWAR, AFM
ISLAM, MA
LIMONCELLI, L
WILSON, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1825 - 1826
[6] GATE CAPACITANCE VOLTAGE CHARACTERISTIC OF MODFETS - ITS EFFECT ON TRANSCONDUCTANCE
MOLONEY, MJ
PONSE, F
MORKOC, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1675 - 1684
[7] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS
SOLOMON, PM
MORKOC, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1015 - 1027
[8] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
STERN, F
[J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &
[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
[10] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS
STERN, F
DASSARMA, S
[J]. PHYSICAL REVIEW B, 1984, 30 (02) : 840 - 848

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