GATE CAPACITANCE VOLTAGE CHARACTERISTIC OF MODFETS - ITS EFFECT ON TRANSCONDUCTANCE

被引：56

作者：

MOLONEY, MJ

PONSE, F

MORKOC, H

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] ROSE HULMAN INST TECHNOL,TERRE HAUTE,IN 47805

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1675 / 1684

页数：10

共 24 条

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