DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS

被引：74

作者：

ARNOLD, D

KETTERSON, A

HENDERSON, T

KLEM, J

MORKOC, H

机构：

[1] Univ of Illinois at, Urbana-Champaign, Dep of Electrical, Engineering, Urbana, IL, USA, Univ of Illinois at Urbana-Champaign, Dep of Electrical Engineering, Urbana, IL, USA

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期

关键词：

BARRIER HEIGHT - CURRENT-VOLTAGE MEASUREMENTS - FOWLER-NORDHEIM TUNNELING - THERMIONIC EMISSIONS;

D O I：

10.1063/1.95076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1237 / 1239

页数：3

共 12 条

[1] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[2] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454
[3] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS
HICKMOTT, TW
SOLOMON, PM
FISCHER, R
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 90 - 92
[4] HICKMOTT TW, UNPUB
[5] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING
KROEMER, H
CHIEN, WY
HARRIS, JS
EDWALL, DD
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 295 - 297
[6] EFFECT OF HETEROJUNCTION SPIKE ON THE QUANTUM EFFICIENCY OF AN AIGAAS/GAAS HETEROJUNCTION CHARGE COUPLED DEVICE
LIU, YZ
ANDERSON, RJ
MILANO, RA
COHEN, MJ
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 967 - 969
[7] PARABOLIC QUANTUM WELLS WITH THE GAAS-ALXGA1-XAS SYSTEM
MILLER, RC
GOSSARD, AC
KLEINMAN, DA
MUNTEANU, O
[J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3740 - 3743
[8] ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS
MILLER, RC
KLEINMAN, DA
GOSSARD, AC
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7085 - 7087
[9] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS
SOLOMON, PM
HICKMOTT, TW
MORKOC, H
FISCHER, R
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 821 - 823
[10] Sze S M, 1981, PHYSICS SEMICONDUCTO, P258

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