CHARGE CONTROL MECHANISM IN MODFETS - A THEORETICAL-ANALYSIS

被引：14

作者：

KHONDKER, AN ^{[1
]}

ANWAR, AFM ^{[1
]}

ISLAM, MA ^{[1
]}

LIMONCELLI, L ^{[1
]}

WILSON, D ^{[1
]}

机构：

[1] SUNY COLL POTSDAM,DEPT PHYS,POTSDAM,NY 13676

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1825 / 1826

页数：2

相关论文

共 8 条

[1] INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES
CIRILLO, NC
SHUR, MS
ABROKWAH, JK
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 71 - 74
[2] A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES
DAS, MB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 11 - 17
[3] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
DELAGEBEAUDEUF, D
LINH, NT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960
[4] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR
DRUMMOND, TJ
MORKOC, H
LEE, K
SHUR, M
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341
[5] GATE CAPACITANCE VOLTAGE CHARACTERISTIC OF MODFETS - ITS EFFECT ON TRANSCONDUCTANCE
MOLONEY, MJ
PONSE, F
MORKOC, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1675 - 1684
[6] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
STERN, F
[J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &
[7] STERN F, 1984, PHYS REV B, V30
[8] TIWARI S, 1984, IEEE T ELECTRON DEVI, V31