CORE-LEVEL SHIFTS OF THE GE(100)-(2X1) SURFACE AND THEIR ORIGINS

The surface shifts of the Ge 3d core level from the clean Ge(100)-(2x1) surface have been investigated using Si epitaxial layers grown with Sb as a surfactant. We are able to obtain a line shape close to that of the natural line shape of the Ge 3d and, in turn, we have resolved two surface-related components in the core-level spectrum of the clean surface, in contrast to previously observed single component. The origin of these shifts is addressed: one comes from the top layer and the other from the layer below the surface. A comparison with the Si(100)-(2x1) surface is also presented.