SURFACTANTS IN EPITAXIAL-GROWTH

被引:1054
作者
COPEL, M
REUTER, MC
KAXIRAS, E
TROMP, RM
机构
关键词
D O I
10.1103/PhysRevLett.63.632
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:632 / 635
页数:4
相关论文
共 15 条
  • [1] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE
    ASAI, M
    UEBA, H
    TATSUYAMA, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583
  • [2] STRUCTURAL PERFECTION OF THE SI(111)-(1X1) AS SURFACE
    COPEL, M
    TROMP, RM
    [J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2766 - 2769
  • [3] FISANICK GJ, 1988, MATER RES SOC S P, V102, P25
  • [4] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE
    HIMPSEL, FJ
    MCFEELY, FR
    TALEBIBRAHIMI, A
    YARMOFF, JA
    HOLLINGER, G
    [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6084 - 6096
  • [5] GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING
    IYER, SS
    TSANG, JC
    COPEL, MW
    PUKITE, PR
    TROMP, RM
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 219 - 221
  • [6] SURFACE SEGREGATION OF SB ON SI(100) DURING MOLECULAR-BEAM EPITAXY GROWTH
    JORKE, H
    [J]. SURFACE SCIENCE, 1988, 193 (03) : 569 - 578
  • [7] KASPER E, 1988, CHEM PHYSICS SOLID S, P557
  • [8] LEGOUES FK, IN PRESS
  • [9] THIN EPITAXIAL GE-SI(111) FILMS - STUDY AND CONTROL OF MORPHOLOGY
    MAREE, PMJ
    NAKAGAWA, K
    MULDERS, FM
    VANDERVEEN, JF
    KAVANAGH, KL
    [J]. SURFACE SCIENCE, 1987, 191 (03) : 305 - 328
  • [10] PSEUDOMORPHIC STRUCTURE AT THE INTERFACE OF GE ON SI(111) STUDIED BY HIGH-ENERGY-ION SCATTERING
    NARUSAWA, T
    GIBSON, WM
    [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1459 - 1462