THIN EPITAXIAL GE-SI(111) FILMS - STUDY AND CONTROL OF MORPHOLOGY

被引：162

作者：

MAREE, PMJ ^{[1
]}

NAKAGAWA, K ^{[1
]}

MULDERS, FM ^{[1
]}

VANDERVEEN, JF ^{[1
]}

KAVANAGH, KL ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

SURFACE SCIENCE | 1987年 / 191卷 / 03期

关键词：

D O I：

10.1016/S0039-6028(87)81180-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：305 / 328

页数：24

共 51 条

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[3] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE
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UEBA, H
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583
[4] STRUCTURE AND GROWTH OF CRYSTALLINE SUPERLATTICES - FROM MONOLAYER TO SUPERLATTICE
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VANDERMERWE, JH
[J]. PHYSICAL REVIEW B, 1986, 33 (06): : 3657 - 3671
[5] Bauer E., 1958, Z KRISTALLOGR, V110, P372, DOI DOI 10.1524/ZKRI.1958.110.1-6.372
[6] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY
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LYNCH, RT
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104
[7] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[8] BEAN JC, 1985, 1ST P INT S SI MBE, V85, P337
[9] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES
BEVK, J
MANNAERTS, JP
FELDMAN, LC
DAVIDSON, BA
OURMAZD, A
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 286 - 288
[10] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS
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MOORE, AR
HERMAN, F
[J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

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