EPITAXIAL GERMANIUM-SILICON STRUCTURES OBTAINED IN ULTRAHIGH-VACUUM

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[3] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 298 - 301

[4] STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING [J]. THIN SOLID FILMS, 1974, 20 (01) : 1 - 10

[5] ALEKSANDROV LN, 1972, MIKROELEKTRONIKA, V1, P120

[6] ALEKSANDROV LN, 1974, OBZORY PO ELEKTRON T, V2, P193

[7] P-LAYERS ON VACUUM HEATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 979 - 985

[8] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[9] INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS [J]. SURFACE SCIENCE, 1969, 15 (01) : 1 - &

[10] LOW-TEMPERATURE EPITAXY OF GE FILMS BY SPUTTER DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 14 - 19

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[3] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 298 - 301

[4] STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING [J]. THIN SOLID FILMS, 1974, 20 (01) : 1 - 10

[5] ALEKSANDROV LN, 1972, MIKROELEKTRONIKA, V1, P120

[6] ALEKSANDROV LN, 1974, OBZORY PO ELEKTRON T, V2, P193

[7] P-LAYERS ON VACUUM HEATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 979 - 985

[8] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[9] INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS [J]. SURFACE SCIENCE, 1969, 15 (01) : 1 - &

[10] LOW-TEMPERATURE EPITAXY OF GE FILMS BY SPUTTER DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 14 - 19