LOW-TEMPERATURE EPITAXY OF GE FILMS BY SPUTTER DEPOSITION

被引:10
作者
KHAN, IH [1 ]
机构
[1] NASA,AMES RES CTR,MOFFETT FIELD,CA 94035
关键词
D O I
10.1063/1.1661849
中图分类号
O59 [应用物理学];
学科分类号
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页码:14 / 19
页数:6
相关论文
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