LOW-PRESSURE SPUTTERED GERMANIUM FILMS

[1] SOURCE OF ACCEPTORS IN LOW RESISTIVITY VACUUM-DEPOSITED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3407 - &

[2] EPITAXIAL GROWTH OF SILVER + GOLD FILMS BY SPUTTERING [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (100): : 703 - &

[3] EPITAXIAL TEMPERATURE OF GERMANIUM DEPOSITED ON CALCIUM FLUORIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 251 - +

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[5] TEXTURAL PROPERTIES OF GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 877 - &

[6] THE EFFECT OF VACUUM-EVAPORATION PARAMETERS ON THE STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF THIN GERMANIUM FILMS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 205 - &

[7] Handler P., 1957, SEMICONDUCTOR SURFAC, P23

[8] KISTERMAKER J, 1962, 5 P INT C ION PHEN G, P95

[9] KRIKORIAN E, 1964, 11 NATL VAC S CHICAG

[10] KUROV GA, 1957, KRISTALLOGRAFIYA, V2, P59

[1] SOURCE OF ACCEPTORS IN LOW RESISTIVITY VACUUM-DEPOSITED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3407 - &

[2] EPITAXIAL GROWTH OF SILVER + GOLD FILMS BY SPUTTERING [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (100): : 703 - &

[3] EPITAXIAL TEMPERATURE OF GERMANIUM DEPOSITED ON CALCIUM FLUORIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 251 - +

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[5] TEXTURAL PROPERTIES OF GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 877 - &

[6] THE EFFECT OF VACUUM-EVAPORATION PARAMETERS ON THE STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF THIN GERMANIUM FILMS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 205 - &

[7] Handler P., 1957, SEMICONDUCTOR SURFAC, P23

[8] KISTERMAKER J, 1962, 5 P INT C ION PHEN G, P95

[9] KRIKORIAN E, 1964, 11 NATL VAC S CHICAG

[10] KUROV GA, 1957, KRISTALLOGRAFIYA, V2, P59