THIN EPITAXIAL GE-SI(111) FILMS - STUDY AND CONTROL OF MORPHOLOGY

[11] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[12] HIGH-QUALITY HETEROEPITAXIAL GE GROWTH ON (100) SI BY MBE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 451 - 457

[13] HETERO-EPITAXIAL GROWTH OF GE ON (111) SI BY VACUUM EVAPORATION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1070 - 1072

[14] GEIS MW, 1983, MATER RES SOC P, V13, P477

[15] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J]. SURFACE SCIENCE, 1985, 155 (2-3) : 413 - 431

[16] REORDERING OF RECONSTRUCTED SI-SURFACES UPON GE-DEPOSITION AT ROOM-TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 294 - 297

[17] GOSSMANN HJ, 1984, SURF SCI, V138, pL175, DOI 10.1016/0039-6028(84)90247-4

[18] SI(111)(7X7)-GE AND SI(111)(5X5)-GE SURFACES STUDIED BY ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6949 - 6951

[19] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 513 - 517

[20] RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE [J]. SURFACE SCIENCE, 1984, 136 (2-3) : 267 - 284

[11] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[12] HIGH-QUALITY HETEROEPITAXIAL GE GROWTH ON (100) SI BY MBE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 451 - 457

[13] HETERO-EPITAXIAL GROWTH OF GE ON (111) SI BY VACUUM EVAPORATION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1070 - 1072

[14] GEIS MW, 1983, MATER RES SOC P, V13, P477

[15] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J]. SURFACE SCIENCE, 1985, 155 (2-3) : 413 - 431

[16] REORDERING OF RECONSTRUCTED SI-SURFACES UPON GE-DEPOSITION AT ROOM-TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 294 - 297

[17] GOSSMANN HJ, 1984, SURF SCI, V138, pL175, DOI 10.1016/0039-6028(84)90247-4

[18] SI(111)(7X7)-GE AND SI(111)(5X5)-GE SURFACES STUDIED BY ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6949 - 6951

[19] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 513 - 517

[20] RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE [J]. SURFACE SCIENCE, 1984, 136 (2-3) : 267 - 284