HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE

[1] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 298 - 301

[2] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123

[3] NEW ADATOM MODEL FOR SI(111) 7X7 AND SI(111)-GE 5X5 RECONSTRUCTED SURFACES [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4470 - 4480

[4] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47

[5] ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1501 - 1503

[6] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[7] HETERO-EPITAXIAL GROWTH OF GE ON (111) SI BY VACUUM EVAPORATION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1070 - 1072

[8] REORDERING OF RECONSTRUCTED SI-SURFACES UPON GE-DEPOSITION AT ROOM-TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 294 - 297

[9] GOSSMANN HJ, 1984, SURF SCI, V138, pL175, DOI 10.1016/0039-6028(84)90247-4

[10] STRUCTURAL STUDY OF SN-INDUCED SUPERSTRUCTURES ON GE(111) SURFACES BY RHEED [J]. SURFACE SCIENCE, 1981, 105 (2-3) : 395 - 428

[1] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 298 - 301

[2] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123

[3] NEW ADATOM MODEL FOR SI(111) 7X7 AND SI(111)-GE 5X5 RECONSTRUCTED SURFACES [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4470 - 4480

[4] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47

[5] ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1501 - 1503

[6] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[7] HETERO-EPITAXIAL GROWTH OF GE ON (111) SI BY VACUUM EVAPORATION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1070 - 1072

[8] REORDERING OF RECONSTRUCTED SI-SURFACES UPON GE-DEPOSITION AT ROOM-TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 294 - 297

[9] GOSSMANN HJ, 1984, SURF SCI, V138, pL175, DOI 10.1016/0039-6028(84)90247-4

[10] STRUCTURAL STUDY OF SN-INDUCED SUPERSTRUCTURES ON GE(111) SURFACES BY RHEED [J]. SURFACE SCIENCE, 1981, 105 (2-3) : 395 - 428