PSEUDOMORPHIC STRUCTURE AT THE INTERFACE OF GE ON SI(111) STUDIED BY HIGH-ENERGY-ION SCATTERING

被引：69

作者：

NARUSAWA, T ^{[1
]}

GIBSON, WM ^{[1
]}

机构：

[1] SUNY ALBANY,INST PARTICLE SOLID INTERACT,ALBANY,NY 12222

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.47.1459

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1459 / 1462

页数：4

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