STRUCTURE STUDY OF AU-SI INTERFACE BY MEV ION-SCATTERING

被引：62

作者：

NARUSAWA, T ^{[1
]}

KINOSHITA, K ^{[1
]}

GIBSON, WM ^{[1
]}

HIRAKI, A ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：872 / 875

页数：4

共 15 条

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[2]

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[5]

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[6] DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEM [J].

NARUSAWA, T ;

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[7]

NARUSAWA T, 1980, 4TH P INT C SOL SURF, V1, P673

[8]

OHKUMA K, 1979, J PHYS C, V12, P1835

[9] PRESENCE OF CRITICAL AU-FILM THICKNESS FOR ROOM-TEMPERATURE INTERFACIAL REACTION BETWEEN AU(FILM) AND SI(CRYSTAL SUBSTRATE) [J].

OKUNO, K ;

ITO, T ;

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SOLID STATE COMMUNICATIONS, 1980, 34 (06) :493-497

[10]

OURA K, 1979, SURF SCI, V82, P204

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