GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING

被引：131

作者：

IYER, SS

TSANG, JC

COPEL, MW

PUKITE, PR

TROMP, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.101014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：219 / 221

页数：3

共 13 条

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[4] IYER SS, IN PRESS THIN SOLID
[5] EPITAXIAL-GROWTH OF GEXSI1-X ON SI - A DIRECT MONTE-CARLO SIMULATION
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[J]. PHYSICAL REVIEW B, 1988, 37 (02): : 1039 - 1042
[6] MENENDEZ J, IN PRESS J VAC SCI T
[7] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES
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[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732
[8] RAMAN-SCATTERING STUDY OF AMORPHOUS SI-GE INTERFACES
PERSANS, PD
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[J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5558 - 5560
[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GEXSI1-X MBE GROWTH ON SI(001) SUBSTRATES
SAKAMOTO, K
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NAGAO, S
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05): : 666 - 670
[10] A NEW UHV SYSTEM FOR CHANNELING BLOCKING ANALYSIS OF SOLID-SURFACES AND INTERFACES
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 4 (01) : 155 - 166

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