REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GEXSI1-X MBE GROWTH ON SI(001) SUBSTRATES

被引：79

作者：

SAKAMOTO, K ^{[1
]}

SAKAMOTO, T ^{[1
]}

NAGAO, S ^{[1
]}

HASHIGUCHI, G ^{[1
]}

KUNIYOSHI, K ^{[1
]}

BANDO, Y ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 05期

关键词：

D O I：

10.1143/JJAP.26.666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：666 / 670

页数：5

共 23 条

[1] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662
[2] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE
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UEBA, H
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[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[4] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR
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KIBBEL, H
KASPAR, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 633 - 638
[5] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[6] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE
ISHIZAKA, A
SHIRAKI, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671
[7] MOBILITY ENHANCEMENT IN MODULATION-DOPED SI-SI1-XGEX SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
JORKE, H
HERZOG, HJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (05) : 998 - 1001
[8] SI-BEAM RADIATION CLEANING IN MOLECULAR-BEAM EPITAXY
KUGIMIYA, K
HIROFUJI, Y
MATSUO, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 564 - 567
[9] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
LEWIS, BF
LEE, TC
GRUNTHANER, FJ
MADHUKAR, A
FERNANDEZ, R
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 419 - 424
[10] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

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