MOBILITY ENHANCEMENT IN MODULATION-DOPED SI-SI1-XGEX SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY

被引：24

作者：

JORKE, H

HERZOG, HJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 05期

关键词：

D O I：

10.1149/1.2108786

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：998 / 1001

页数：4

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