SECONDARY IMPLANTATION OF SB INTO SI MOLECULAR-BEAM EPITAXY LAYERS

被引：83

作者：

JORKE, H

HERZOG, HJ

KIBBEL, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.96109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：511 / 513

页数：3

共 22 条

[1]

ALEKSANDROV LN, 1979, PHYS STATUS SOLIDI A, V54, P463, DOI 10.1002/pssa.2210540204

[2] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J].

BECKER, GE ;

BEAN, JC .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3395-3399

[3] LOW-DOSE DEPTH DISTRIBUTION OF RECOIL IMPLANTED ATOMS [J].

FALCONE, G ;

OLIVA, A .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :41-43

[4]

Fisher G., 1978, RADIAT EFF, V38, P41

[5] ION SURFACE INTERACTIONS DURING VAPOR-PHASE CRYSTAL-GROWTH BY SPUTTERING, MBE, AND PLASMA-ENHANCED CVD - APPLICATIONS TO SEMICONDUCTORS [J].

GREENE, JE ;

BARNETT, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :285-302

[6] A SEMIEMPIRICAL FORMULA DESCRIBING THE RECOIL YIELD IN SILICON [J].

GROB, JJ ;

MESLI, N ;

GROB, A ;

SIFFERT, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (03) :161-167

[7] RECOIL IMPLANTATION FROM THIN SURFACE-FILMS ON SILICON [J].

GROTZSCHEL, R ;

KLABES, R ;

KREISSIG, U ;

SCHMIDT, A .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :129-134

[8] ANTIMONY CONCENTRATION IN SILICON EPITAXIAL LAYER FORMED BY PARTIALLY IONIZED VAPOR-DEPOSITION [J].

ITOH, T ;

NAKAMURA, T ;

MUROMACHI, M ;

SUGIYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) :1145-1146

[9] LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION [J].

ITOH, T ;

NAKAMURA, T ;

MUROMACHI, M ;

SUGIYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) :553-557

[10] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

IYER, SS ;

METZGER, RA ;

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5608-5613

← 1 2 3 →