A SEMIEMPIRICAL FORMULA DESCRIBING THE RECOIL YIELD IN SILICON

被引：5

作者：

GROB, JJ

MESLI, N

GROB, A

SIFFERT, P

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 35卷 / 03期

关键词：

D O I：

10.1007/BF00616970

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：161 / 167

页数：7

共 35 条

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[8]

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[9] RECOIL IMPLANTATION YIELDS AND DEPTH PROFILES - ANALYTICAL EXPRESSIONS FOR PRIMARY AND CASCADE CONTRIBUTIONS [J].

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[10] RECOIL IMPLANTATION OF ANTIMONY INTO SILICON [J].

GROB, A ;

GROB, JJ ;

MESLI, N ;

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SIFFERT, P .

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