HEAVY-ION SPUTTERING YIELD OF SILICON

[1] SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 279 - 289

[2] DOSE DEPENDENCE OF 45 keV V + AND Bi + ION SPUTTERING YIELD OF COPPER. [J]. Radiation Effects, 1973, 19 (04): : 257 - 261

[3] Andersen H. H., 1973, Radiation Effects, V19, P139, DOI 10.1080/00337577308232233

[4] ANDERSEN HC, TO BE PUBLISHED

[5] NONLINEAR EFFECTS IN HEAVY-ION SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 953 - 954

[6] ANDERSEN HH, UNPUBLISHED

[7] ANDERSEN HH, 1972, RADIAT EFF, V13, P67

[8] ANDERSEN HH, 1975, PHYSICS IONIZED GASE

[9] RANGE DISTRIBUTION OF IMPLANTED IONS IN SIO2, SI3N4, AND AL2O3 [J]. APPLIED PHYSICS LETTERS, 1973, 22 (10) : 490 - 492

[10] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &

[1] SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 279 - 289

[2] DOSE DEPENDENCE OF 45 keV V + AND Bi + ION SPUTTERING YIELD OF COPPER. [J]. Radiation Effects, 1973, 19 (04): : 257 - 261

[3] Andersen H. H., 1973, Radiation Effects, V19, P139, DOI 10.1080/00337577308232233

[4] ANDERSEN HC, TO BE PUBLISHED

[5] NONLINEAR EFFECTS IN HEAVY-ION SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 953 - 954

[6] ANDERSEN HH, UNPUBLISHED

[7] ANDERSEN HH, 1972, RADIAT EFF, V13, P67

[8] ANDERSEN HH, 1975, PHYSICS IONIZED GASE

[9] RANGE DISTRIBUTION OF IMPLANTED IONS IN SIO2, SI3N4, AND AL2O3 [J]. APPLIED PHYSICS LETTERS, 1973, 22 (10) : 490 - 492

[10] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &