RANGE DISTRIBUTION OF IMPLANTED IONS IN SIO2, SI3N4, AND AL2O3

被引：36

作者：

CHU, WK ^{[1
]}

CROWDER, BL ^{[1
]}

MAYER, JW ^{[1
]}

ZIEGLER, JF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 10期

关键词：

D O I：

10.1063/1.1654480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：490 / 492

页数：3

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共 13 条

[1] BRICE DK, 1971, RADIAT EFF, V11, P227
[2] DENSITIES OF AMORPHOUS SI FILMS BY NUCLEAR BACKSCATTERING
BRODSKY, MH
KAPLAN, D
ZIEGLER, JF
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 305 - &
[3] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON
CROWDER, BL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &
[4] FURAKAWA S, 1972, P US JAPAN SEMINAR I
[5] RANGES OF NA K KR AND XE IONS IN AMORPHOUS AL2O3 IN ENERGY REGION 40-1 000 KEV
JESPERSG.P
DAVIES, JA
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (09) : 2983 - &
[6] JOHNSON WS, 1970, PROJECTED RANGE STAT
[7] CHANNELING-EFFECT ANALYSIS OF THIN FILMS ON SILICON - ALUMINUM OXIDE
MITCHELL, IV
KAMOSHIDA, M
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4378 - +
[8] MICROANALYSIS OF MATERIALS BY BACKSCATTERING SPECTROMETRY
NICOLET, MA
MITCHELL, IV
MAYER, JW
[J]. SCIENCE, 1972, 177 (4052) : 841 - &
[9] RANGE OF AR KR AND XE IONS IN SOLIDS IN 500-KEV TO 2-MEV ENERGY REGION
POWERS, D
CHU, WK
BOURLAND, PD
[J]. PHYSICAL REVIEW, 1968, 165 (02): : 376 - &
[10] SCHIOTT HE, 1971, ION IMPLANTATION